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  ret y rt - very low profile - typical height of 0.68mm - reduce switching and conduction loss - ideal for automated placement - ultrafast recovery times for high frequency - halogen-free according to iec 61249-2-21 definition esh1dm to esh1jm is ideal device for the compact space pcb design. specially as boost diode in power factor correction circuitry. the device is also intended for use as a free wheeling diode in power supplies for chargers, led lighting, and other power switching applications. sy m bol u n i t v rrm v i f(av) a trr ns cj pf t j o c t stg o c note 2: reverse recovery test conditions: if=0.5a, ir=1.0a, irr=0.25a note 4: thermal resistance r ja - from junction to ambient, r jm - and junction to mount document number ds_d1401019 version: b14 esh 1 j m d3 d5 d7 400 600 200 typ. max. 1 50 maximum reverse recovery time (note 2) 25 taiwan semiconductor typ. max. 1.25 1.5 marking code maximum instantaneous forward voltage (note 1) @ 1 a v f typical junction capacitance (note 3) 3 typical thermal resistance (note 4) r jm r ja 4092 note 1: pulse test with pw=300 sec, 1% duty cycle -55 to +150 note 3: measured at 1 mhz and applied reverse voltage of 4.0 v dc maximum reverse current @ rated vr t j =25 t j =125 i r a - 5 o c/w operating junction temperature range storage temperature range -55 to +150 v maximum average forward rectified current 1 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 15 m ech an i cal dat a case: micro sma micro sma molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant a terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test appli cat i on esh 1 dm esh 1 gm esh1dm thru esh1jm surface mount ultrafast rectifiers feat u res - moisture sensitivity level: level 1, per j-std-020 maximum repetitive peak reverse voltage polarity: indicated by cathode band weight: 0.006g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec downloaded from: http:///
part n o. note 1: "x" defines voltage from 200v (esh1dm) to 600v (esh1jm) note 2: for micro sma: packing code (whole series with green compound) part n o. esh1jm (ta=25 unless otherwise noted) document number: ds_d1401019 version: b14 esh1dm thru esh1jm taiwan semiconductor pack i n g esh1xm (note 1) rs suffix "g" micro sma 3000 / 7" plastic reel g ex am ple orderi n g i n form at i on pack age green com pou n d code green com pou n d code pack i n g code rat i n gs an d ch aract eri st i cs cu rv es pack i n g code rs descri pt i on green compound esh1jm rsg preferred p/n 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 175 average forward current (a) lead temperature ( o c) fig.1 maximum forward current derating curve 0 5 10 15 peak forward surage current (a) number of cycles at 60 hz fig. 2 maximum forward surge current 8.3ms single half sine-wave 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics t j =25 t j =125 resistive or induvtive load 0.001 0.01 0.1 1 10 0 2 04 06 08 01 0 0 instantaneous reverse current (ua) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics t j =25 t j =125 downloaded from: http:///
min max min max a 2.30 2.70 0.091 0.106 b 2.10 2.30 0.083 0.091 c 0.63 0.73 0.025 0.029 d 0.10 0.20 0.004 0.008 e 1.15 1.35 0.045 0.053 f 0.65 0.85 0.026 0.034 g 1.15 1.35 0.045 0.053 h 0.75 0.95 0.030 0.037 i 1.10 1.50 0.043 0.059 j 0.55 0.75 0.022 0.030 k 0.55 0.75 0.022 0.030 l 0.65 0.85 0.026 0.034 p/n = marking code yw = date code document number: ds_d1401019 version: b14 unit (inch) 0.0430.079 0.020 0.031 0.039 m ark i n g di agram taiwan semiconductor c0 . 5 d0 . 8 e1 . 0 su ggest ed pad lay ou t symbol unit (mm) a1 . 1 b2 . 0 esh1dm thru esh1jm pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) downloaded from: http:///


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